Overview: PolarTM HiPerFETTM Power MOSFET IXFH120N20P IXFK120N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
PD
dV/dt
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque TO-247 TO-264 Maximum Ratings 200 V 200 V ± 20 V ± 30 V 120 A 75 A 300 A 60 A 2 J 714 W 10 V/ns -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g 10 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 200 V 2.5 5.
