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IXFK120N20P - Power MOSFET

Download the IXFK120N20P datasheet PDF. This datasheet also covers the IXFH120N20P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Avalanche Rated z Fast Intrinsic Diode z Low QG z Low RDS(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH120N20P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK120N20 Power MOSFET IXYS
IXFK120N25 HiPerFET Power MOSFETs IXYS
IXFK120N25P Power MOSFET IXYS
IXFK120N30T GigaMOS Power MOSFET IXYS
IXFK120N30T GigaMOS Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFK100N10 Power MOSFET
IXFK100N25 Power MOSFET
IXFK102N30P Polar MOSFETs
IXFK105N07 HiPerFET Power MOSFETs
IXFK110N06 HiPerFET Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM HiPerFETTM Power MOSFET IXFH120N20P IXFK120N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque TO-247 TO-264 Maximum Ratings 200 V 200 V ± 20 V ± 30 V 120 A 75 A 300 A 60 A 2 J 714 W 10 V/ns -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.