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IXFK69N30P Datasheet PolarHT HiPerFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXFK69N30P datasheet PDF. This datasheet also includes the IXFH69N30P variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFH69N30P_IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

PolarHT HiPerFET Power MOSFET TM IXFH69N30P IXFK69N30P N-Channel Enhancement Mode Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 69 200 69 50 1.5 10 500 -55 ...

+150 150 -55 ...

Key Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264 300 1.13/10 Nm/lb. in. 6 10 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.

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