IXFK64N50P
IXFK64N50P is manufactured by IXYS.
Advance Technical Information
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PolarHV HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Preliminary Data Sheet
IXFK 64N50P IXFX 64N50P
VDSS ID25
RDS(on) trr
= 500 V = 64 A ≤ 85 mΩ ≤ 200 ns
TO-264 AA (IXFK)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 64 150 64 80 2.5 20 830 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J...
