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X-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK66N85X IXFX66N85X
D G
S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
dv/dt
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
Maximum Ratings
850
V
850
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
66 140
33 2.5
1250
50
-55 ... +150 150
-55 ... +150
A A
A J
W
V/ns
C C C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Torque (TO-264) Mounting Force (PLUS247)
1.13/10 20..120 /4.5..27
Nm/lb.
IXFK66N85X Datasheet
