IXFK88N30P Datasheet PolarHT HiPerFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXFK88N30P datasheet PDF. This datasheet also includes the IXFH88N30P variant, as both parts are published together in a single manufacturer document.

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IXFK88N30P polarht hiperfet power mosfet by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXFH88N30P_IXYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXFK88N30P
Manufacturer	IXYS (now Littelfuse)
File Size	618.57 KB
Description	PolarHT HiPerFET Power MOSFET
Download	IXFK88N30P Download (PDF)

Overview

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet IXFH 88N30P IXFK 88N30P VDSS ID25 www.DataSheet4U.com RDS(on) trr = 300 V = 88 A = 40 mΩ ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 88 75 220 60 60 2.0 10 600 -55 ...

+150 150 -55 ...

Key Features

z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264 300 z 1.13/10 Nm/lb. in. 6 10 g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IXFK88N30P	Polar HiPerFET Power MOSFET	IXYS Corporation

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