Download the IXFK88N30P datasheet PDF.
This datasheet also covers the IXFT88N30P variant, as both devices belong to the same polar hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
z z z z z
D = Drain Tab = Drain
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-264) TO-268 TO-247 TO-264
300 260 1.13/10 4 6 10
International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages
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Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C VGS = 10V, ID =.
Full PDF Text Transcription for IXFK88N30P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFK88N30P. For precise diagrams, and layout, please refer to the original PDF.
88A 40mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net TO-268 (IXFT) G S Tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 88 75 220 60 2 10 600 -55 to +150 +150 -55 to +150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in.
IXFK88N30P Datasheet
