• Part: IXFP20N50P3M
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 161.52 KB
Download IXFP20N50P3M Datasheet PDF
IXFP20N50P3M page 2
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Datasheet Summary

Preliminary Technical Information Polar3TM HiperFETTM Power MOSFET VDSS = ID25 = RDS(on)  500V 8A 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 500  30 V  40 V 8A 40 A 10 A 300 mJ -55 ... +150 150 -55 ... +150 300 260 V/ns  C  C  C °C °C 1.13 /...