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IXFP4N85X - Power MOSFET

Download the IXFP4N85X datasheet PDF. This datasheet also covers the IXFY4N85X variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFY4N85X-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFP4N100P Power MOSFET IXYS Corporation
IXFP4N100PM Power MOSFET IXYS Corporation
IXFP4N100Q Power MOSFET IXYS Corporation
IXFP4N100QM Power MOSFET IXYS Corporation
IXFP05N100M High Voltage HiperFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFP4N85XM Power MOSFET
IXFP12N65X2 Power MOSFET
IXFP12N65X2M Power MOSFET
IXFP130N15X3 Power MOSFET
IXFP14N85X Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
X-Class HiPERFET Power MOSFET N-Channel Enhancement Mode IXFY4N85X IXFA4N85X IXFP4N85X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3.5 10.0 2 125 50 150 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-252 TO-263 TO-220 0.35 g 2.50 g 3.