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IXFQ12N80P - Power MOSFET

Download the IXFQ12N80P datasheet PDF. This datasheet also covers the IXFH12N80P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 μA VGS(th) VDS = VGS, ID = 2.5 mA Characteristic Values Min. Typ. Max. 800 V 3.0 5.5 V z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect IGSS I DSS RDS(on) VGS = ±30 V, VDS = 0 V V =V DS DSS V =0V GS T J = 125°C VGS = 10 V, ID = 0.5 ID25 , Note 1 ±100 nA 25 μA Advanta.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH12N80P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFQ10N80P Power MOSFET IXYS Corporation
IXFQ14N80P PolarHV HiPerFET Power MOSFET IXYS Corporation
IXFQ22N60P3 Polar3 HiperFET Power MOSFETs IXYS Corporation
IXFQ22N60P3 Power MOSFET IXYS Corporation
IXFQ24N50P2 Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFQ140N20X3 Power MOSFET
IXFQ20N50P3 Power MOSFET
IXFQ24N60X Power MOSFET
IXFQ30N50P Power MOSFET
IXFQ30N60X Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr ≤ 250 ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSS VDGR V GS VGSM ID25 IDM IAR E AR EAS T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C TC = 25°C 800 V 800 V TO-3P (IXFQ) ±30 V ±40 V 12 A 36 A 6A G DS 30 mJ PLUS220 (IXFV) 0.8 J D (TAB) D (TAB) dv/dt PD T J TJM Tstg TL TSOLD Md FC Weight IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, T J ≤ 150°C, R G = 5 Ω TC = 25°C 10 360 -55 ... +150 150 -55 ... +150 V/ns W GDS D (TAB) °C °C PLUS220 SMD (IXFV...S) °C 1.6 mm (0.062 in.