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IXFR14N80 Datasheet - IXYS

IXFR14N80 Power MOSFET

HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab) N-Channel Enhancement Mode High dv/dt, Low t , HDMOSTM Family rr V = 800 DSS ID25 = 14 =RDS(on) 0.7 V A Ω trr ≤ 250 ns Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL VISOL Weight Symbol VDSS V GS(th) IGSS IDSS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VD.

IXFR14N80 Features

* °C z Isolated mounting tab °C z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure °C z Unclamped Inductive Switching (UIS) V rated z Low drain to tab capacitance(

IXFR14N80-IXYS.pdf