IXFR14N80 Overview
Key Features
- Isolated mounting tab °C
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure °C
- Unclamped Inductive Switching (UIS) V rated
- Low drain to tab capacitance(<25pF) g
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| A2SHB | HAOHAI | N-Channel MOSFET |
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |