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Advance Technical Information
TrenchTM HiperFETTM Power MOSFETs
IXFT150N20T IXFH150N20T
VDSS = 200V
ID25 = 150A ≤ RDS(on) 15mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD
dv/dt
TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
200
V
200
V
±20
V
±30
V
150
A
375
A
75
A
1.5
J
890
W
20
V/ns
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
IXFT150N20T Datasheet
