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IXFT26N60Q - Power MOSFETs

Download the IXFT26N60Q datasheet PDF. This datasheet also covers the IXFH26N60Q variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l Low gate charge l International standard packages l Epoxy meet UL 94 V-0, flammability classification l Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH26N60Q-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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IXFT26N50Q Power MOSFET IXYS Corporation
IXFT20N100P Polar Power MOSFET HiPerFET IXYS Corporation
IXFT20N60Q HiPerFET Power MOSFETs Q-Class IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFT26N60 Power MOSFETs
IXFT26N100XHV Power MOSFET
IXFT26N55Q Power MOSFETs
IXFT21N50Q Power MOSFET
IXFT22N60P PolarHV HiPerFET Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 26N60Q IXFT 26N60Q VDSS ID25 RDS(on) = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns Symbol VDSS VDGR V GS VGSM I D25 IDM IAR EAR EAS dv/dt P D TJ T JM Tstg T L Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 26 A 104 A 26 A 45 mJ 1.5 J 5 V/ns 360 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C Mounting torque TO-247 1.13/10 Nm/lb.in.