* z International Standard Packages z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplie
IXFT40N30Q Datasheet (124.24 KB)
IXFT40N30Q
IXYS
124.24 KB
Power mosfets.
HiPerFETTM Power MOSFETs Q-Class Not for New Designs IXFH40N30Q IXFT40N30Q VDSS = 300V ID25 = 40A ≤RDS(on) 85mΩ N-Channel Enhancement Mode Avalanch.
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