IXFT40N30Q Description
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 40N30Q IXFT 40N30Q VDSS ID25 RDS(on) trr = 300 V = 40 A = 80 mW £ 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM.
IXFT40N30Q Key Features
- IXYS advanced low Qg process
- International standard packages
- Low gate charge and capacitance
- easier to drive
- faster switching
- Low RDS (on)
- Unclamped Inductive Switching (UIS) rated
- Molding epoxies meet UL 94 V-0 flammability classification
- Easy to mount
- Space savings