IXFT40N30Q
IXFT40N30Q is manufactured by IXYS.
HiPerFETTM Power MOSFETs
Q-Class
Not for New Designs
IXFH40N30Q IXFT40N30Q
VDSS = 300V ID25 = 40A ≤RDS(on) 85mΩ
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings 300 300
± 20 ± 30
40 160
40 1.0
-55 ... +150 150
-55 ... +150
300 260
1.13 / 10 4 6
V/ns
°C...
