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X-Class HiPerFETTM Power MOSFET
Preliminary Technical Information
IXFT50N60X IXFQ50N60X IXFH50N60X
VDSS = ID25 = RDS(on)
600V 50A 73m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-268 (IXFT)
G S D (Tab)
TO-3P (IXFQ)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247
Maximum Ratings 600 600
V V
30 V 40 V
50 A 120 A
20 A 2J
50 V/ns
660 W
-55 ... +150 150
-55 ... +150
C C C
300 °C 260 °C
1.
IXFT50N60X Datasheet
