IXFT50N60P3 Datasheet | IXYS

Polar3TM Hiper FETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 Maximum Ratings  30  40 V/ns -55 ... +150 150 -55 ... +150  C  C  C °C °C 1.13 / 10 4.0 5.5 6.0 Nm/lb.in g g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1m...