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IXFT50N60P3 - Power MOSFET

Features

  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 Maximum Ratings 600 V 600 V  30 V  40 V 50 A 125 A 25 A 1 J 35 V/ns 1040 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13 / 10 4.0 5.5 6.0 Nm/lb.
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