IXFT50N20 Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: +150 °C 300 °C 1.13/10 Nm/lb.in. 200 2 TJ = 25°C TJ = 125°C V 4V ±100 nA 200 mA 1 mA IXYS reserves the right to change limits, test conditions, and dimensions.
IXFT50N20 Key Features
- Internationalstandardpackages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier