Overview: HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM42N20 IXFM50N20 IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 VDSS
200 V 200 V 200 V ID25
42 A 50 A 58 A trr £ 200 ns TO-247 AD (IXFH) RDS(on)
60mW 45mW 40mW Symbol
VDSS VDGR VGS V
GSM
ID25
IDM
IAR
EAR dv/dt
PD TJ TJM Tstg T
L
Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C IS £ I,
DM di/dt £ 100 A/ms, V DD £ V, DSS TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 42N20 50N20 58N20 42N20 50N20 58N20 42N20 50N20 58N20. 200 V 200 V ±20 V ±30 V 42 A 50 A 58 A 168 A 200 A 232 A 42 A 50 A 58 A 30 mJ 5 V/ns 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Symbol
VDSS VGS(th) IGSS IDSS Test Conditions
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 200 2
TJ = 25°C TJ = 125°C V 4V
±100 nA
200 mA 1 mA IXYS reserves the right to change limits, test conditions, and dimensions.
