IXFT58N20Q Datasheet | IXYS

Hi Per FETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg .. Preliminary data sheet IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS(on) = 200 V = 58 A = 40 m W trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 58 232 58 30 1.0 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A m J J V/ns W °C °C °C °C g g TO-268 (D3) (IXFT) Case Style (TAB) TO-247 AD (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 300 6 4 Features l l l 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.0 4.0 ±100 25 1 40 V V n A µA m A mΩ l l l IXYS advanced low Qg process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 1999 IXYS All rights...