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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM42N20 IXFM50N20
IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20
VDSS
200 V 200 V 200 V
ID25
42 A 50 A 58 A
trr £ 200 ns
TO-247 AD (IXFH)
RDS(on)
60mW 45mW 40mW
Symbol
VDSS VDGR VGS V
GSM
ID25
IDM
IAR
EAR dv/dt
PD TJ TJM Tstg T
L
Md Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS
£
I,
DM
di/dt
£
100
A/ms,
V DD
£
V, DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
42N20 50N20 58N20 42N20 50N20 58N20 42N20 50N20 58N20.
IXFT58N20 Datasheet
