IXFV110N10PS Datasheet PDF (PolarHT HiPerFET Power MOSFET)

IXFV110N10PS - PolarHT HiPerFET Power MOSFET

Features

z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99212A(01/05) IXFH 110N10P IXFV 110N10P IXFV 110N10PS www. DataSheet4U. com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ.

Datasheet Details

Part number	IXFV110N10PS
Manufacturer	IXYS (now Littelfuse)
File Size	184.04 KB
Description	PolarHT HiPerFET Power MOSFET
Datasheet	IXFV110N10PS Datasheet
Additional preview pages of the IXFV110N10PS datasheet.

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Full PDF Text Transcription

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PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS(on) = 100 V = 110 A = 15 mΩ www.DataSheet4U.com TO-247 (IXFH) Maximum Ratings 100 100 ± 20 ± 30 110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ...

Published: Jun 16, 2010 |