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IXFV22N50P - PolarHV HiPerFET Power MOSFET

Download the IXFV22N50P datasheet PDF. This datasheet also covers the IXFV22N50PS variant, as both devices belong to the same polarhv hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 270 mΩ Advantages z z z Easy to mount Space savings High power density DS99358A(03/05) © 2005 IXYS All rights reserved IXFH 22N50P IXFV 22N50P IXFV www. DataSheet4U. com 22N50PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 20 3050 VGS =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFV22N50PS_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFV20N80P PolarHV HiPerFET Power MOSFET IXYS Corporation
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IXFV26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFV22N50PS PolarHV HiPerFET Power MOSFET
IXFV22N60P Power MOSFETs
IXFV22N60PS Power MOSFETs
IXFV110N10P PolarHT HiPerFET Power MOSFET
IXFV110N10PS PolarHT HiPerFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 22N50P IXFV 22N50P IXFV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 500 500 ± 30 V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-247 AD (IXFH) (TAB) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 22 66 22 30 750 10 350 -55 ... +150 150 -55 ... +150 PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV-PS) 1.6 mm (0.062 in.