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IXYS

IXFV12N80PS Datasheet Preview

IXFV12N80PS Datasheet

Power MOSFET

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PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFH12N80P
IXFQ12N80P
IXFV12N80P
IXFV12N80PS
VDSS = 800 V
ID25 = 12 A
RDS(on) 0.85 Ω
trr 250 ns
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
V
DSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
E
AR
EAS
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Tranisent
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
= 25°C
TC = 25°C
800 V
800 V
TO-3P (IXFQ)
±30 V
±40 V
12 A
36 A
6A
G
DS
30 mJ PLUS220 (IXFV)
0.8 J
D (TAB)
D (TAB)
dv/dt
PD
T
J
TJM
Tstg
TL
TSOLD
Md
FC
Weight
IS IDM, di/dt 100 A/μs, VDD VDSS,
T
J
150°C,
R
G
=
5
Ω
TC = 25°C
10
360
-55 ... +150
150
-55 ... +150
V/ns
W
GDS
D (TAB)
°C
°C PLUS220 SMD (IXFV...S)
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
300 °C
260 °C
1.13/10 Nm/lb.in.
G
S
Mounting force (PLUS220,PLUS220SMD) 11..65/2.5..15
PLUS220 & PLUS220SMD
T0-3P
TO-247
4.0
5.5
6.0
N/lb.
g
g
g
G = Gate
S = Source
Features
D (TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
VGS(th)
VDS = VGS, ID = 2.5 mA
Characteristic Values
Min. Typ. Max.
800 V
3.0 5.5 V
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
IGSS
I
DSS
RDS(on)
VGS = ±30 V, VDS = 0 V
V =V
DS DSS
V =0V
GS
T
J
=
125°C
VGS = 10 V, ID = 0.5 ID25 , Note 1
±100 nA
25 μA Advantages
250 μA z Easy to mount
0.85
Ω z Space savings
z High power density
© 2006 IXYS All rights reserved
DS99476E(07/06)




IXYS

IXFV12N80PS Datasheet Preview

IXFV12N80PS Datasheet

Power MOSFET

No Preview Available !

IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
Symbol
gfs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, Note 1
8 14
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
2800
210
19
pF
pF
pF
V = 10 V, V = 0.5 V , I = I
GS DS DSS D D25
R
G
= 5 Ω (External)
23 ns
26 ns
70 ns
25 ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
51 nC
13 nC
19 nC
(TO-247 & TO-3P)
0.35 °C/W
0.21 °C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
I V =0V
S GS
12 A
ISM Repetitive
36 A
V I = I , V = 0 V, Note 1
SD F S GS
1.5 V
trr IS = 12 A, VGS = 0 V
Q
rm
-di/dt
=
100
A/μs,
V
R
=
100
V
I
rm
200 250 ns
0.8 μC
4Α
Note 1: Pulse test, t 300 μs, duty cycle d 2 %
TO-3P (IXFQ) Outline
TO-247 (IXFH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXFV12N80PS
Description Power MOSFET
Maker IXYS
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IXFV12N80PS Datasheet PDF





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