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IXFV22N60P Datasheet Power MOSFETs

Manufacturer: IXYS (now Littelfuse)

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Overview

PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS(on) ≤ 350 m Ω trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Tranisent TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Mounting Force (TO-247) (PLUS220) TO-247 PLUS220 & PLUS220SMD TO-247 (IXFH) Maximum Ratings 600 V 600 V ±30 ±40 V V GDS 22 A 66 A PLUS220 (IXFV) 22 A 40 mJ 1.0 J 20 V/ns GDS D (TAB) D (TAB) 400 W -55 ...

+150 150 -55 ...

+150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in.

Key Features

  • l Fast intrinsic diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99315E(03/06) IXFH 22N60P IXFV22N60P IXFV 22N60PS Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 0.5.

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