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IXFV22N60PS - Power MOSFETs

Download the IXFV22N60PS datasheet PDF. This datasheet also covers the IXFV22N60P variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l Fast intrinsic diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99315E(03/06) IXFH 22N60P IXFV22N60P IXFV 22N60PS Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 0.5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFV22N60P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFV20N80P PolarHV HiPerFET Power MOSFET IXYS Corporation
IXFV20N80PS PolarHV HiPerFET Power MOSFET IXYS Corporation
IXFV26N50P Avalanche Rated Fast Instrinsic Diode IXYS Corporation
IXFV26N50PS Avalanche Rated Fast Instrinsic Diode IXYS Corporation
IXFV26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFV22N60P Power MOSFETs
IXFV22N50P PolarHV HiPerFET Power MOSFET
IXFV22N50PS PolarHV HiPerFET Power MOSFET
IXFV110N10P PolarHT HiPerFET Power MOSFET
IXFV110N10PS PolarHT HiPerFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS(on) ≤ 350 m Ω trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Tranisent TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Mounting Force (TO-247) (PLUS220) TO-247 PLUS220 & PLUS220SMD TO-247 (IXFH) Maximum Ratings 600 V 600 V ±30 ±40 V V GDS 22 A 66 A PLUS220 (IXFV) 22 A 40 mJ 1.