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IXFV30N60P - Power MOSFET

Download the IXFV30N60P datasheet PDF. This datasheet also covers the IXFH30N60P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect DS99316(06/05) © 2005 IXYS All rights reserved IXFH 30N60P IXFV 30N60P IXFV 30N60PS IXFT 30N60P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 15 27 4000 VGS = 0 V, VDS = 25 V, f = 1 MHz 430 42 29 VGS = 10 V, VDS = 0.5 ID25 RG = 4 Ω (External) 20 80 25 145 VGS = 10 V, VDS = 0.5 VDSS, ID =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH30N60P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFV30N60P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFV30N60P. For precise diagrams, and layout, please refer to the original PDF.

Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N6...

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ry Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr www.DataSheet4U.com 600 V 30 A 240 mΩ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 30 80 30 50 1.5 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns PLUS220 (IXFV) G D S D (TAB) PLUS220 (IXFV...

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