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Advance Technical Information
PolarHVTM Power HiPerFET MOSFET
N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode
IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS
VDSS ID25
RDS(on) trr
= 500 V = 30 A = 200 mΩ < 200 ns
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TO-3P (IXFQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 30 75 30 40 1.2 10 460 -55 ... +150 150 -55 ...
IXFV30N50PS Datasheet
