IXFX210N17T - GigaMOS Power MOSFET

IXYS (now Littelfuse)

Download the IXFX210N17T datasheet PDF. This datasheet also covers the IXFK210N17T variant, as both devices belong to the same gigamos power mosfet family and are provided as variant models within a single manufacturer datasheet.

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IXFX210N17T gigamos power mosfet by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXFK210N17T_IXYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXFX210N17T
Manufacturer	IXYS (now Littelfuse)
File Size	147.36 KB
Description	GigaMOS Power MOSFET
Datasheet	IXFX210N17T Datasheet

Overview

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK210N17T IXFX210N17T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 210A 7.5mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 170 170 ± 20 ± 30 210 160 580 100 2 1150 20 -55 ...

+175 175 -55 ...

+175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.in.

Key Features

z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A,.

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