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IXFX240N15T2 Datasheet GigaMOS TrenchT2 HiperFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview

Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK240N15T2 IXFX240N15T2 VDSS = ID25 = RDS(on) ≤ trr ≤ 150V 240A 5.2mΩ 140ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 150 V 150 V ± 20 V ± 30 V 240 A 160 A 600 A 120 A 2 J 1250 W 20 V/ns -55 ...

+175 °C 175 °C -55 ...

+175 °C 300 °C 260 °C 1.13/10 20..120 /4.5..27 Nm/lb.in.

Key Features

  • z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.