IXFX200N10P
IXFX200N10P is Polar HiPerFET Power MOSFET manufactured by IXYS.
Advanced Technical Information
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PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFN 200N10P IXFK 200N10P IXFX 200N10P
VDSS ID25
RDS(on)
= 100 V = 200 A = 7.5 mΩ
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ miniBLOC, SOT-227 B (IXFN) E153432
S D G = Gate S = Source D = Drain
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
200 100 400 60...
