IXFX210N17T
IXFX210N17T is GigaMOS Power MOSFET manufactured by IXYS.
Advance Technical Information
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GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK210N17T IXFX210N17T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
170V 210A 7.5mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
Maximum Ratings 170 170 ± 20 ± 30 210 160 580 100 2 1150 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.in....
