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IXFX230N20T - GigaMOS Power MOSFET

Key Features

  • z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, No.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK230N20T IXFX230N20T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 200V 230A 7.5mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 230 160 630 100 3 20 1670 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb.