IXFX52N100X - Power MOSFET

IXYS (Littelfuse)

Download the IXFX52N100X datasheet PDF. This datasheet also covers the IXFK52N100X variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

International Standard Packages.
Low QG.
Avalanche Rated.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

📥 Download Datasheet

IXFX52N100X power mosfet by IXYS (Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXFK52N100X-IXYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXFX52N100X
Manufacturer	IXYS (Littelfuse)
File Size	367.09 KB
Description	Power MOSFET
Datasheet	IXFX52N100X Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number	Description
IXFX55N50F	Power MOSFET
IXFX100N65X2	Power MOSFET
IXFX120N20	Power MOSFET
IXFX120N25	HiPerFET Power MOSFETs
IXFX120N25P	PolarHT HiPerFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFK52N100X IXFX52N100X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 52 100 10 3 1250 50 -55 ... +150 150 -55 ... +150 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Torque (TO-264P) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.