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IXYS

IXFX52N100X Datasheet Preview

IXFX52N100X Datasheet

Power MOSFET

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X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFK52N100X
IXFX52N100X
D
G
S
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
1000
V
1000
V
30
V
40
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
52
100
10
3
1250
50
-55 ... +150
150
-55 ... +150
A
A
A
J
W
V/ns
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Torque (TO-264P)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264P
PLUS247
10
g
6
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5
6.0 V
100 nA
50 A
5 mA
125 m
VDSS =
ID25 =
RDS(on)
1000V
52A
125m
TO-264P
(IXFK)
G
D
Tab
S
PLUS247
(IXFX)
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
©2019 IXYS CORPORATION, All Rights Reserved
DS100907D(11/19)




IXYS

IXFX52N100X Datasheet Preview

IXFX52N100X Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
RGi
Ciss
Coss
Crss
Co(er)
Co(tr)
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
Characteristic Values
Min. Typ. Max
23
37
S
0.5
6725
pF
1620
pF
123
pF
220
pF
1070
pF
34
ns
13
ns
107
ns
9
ns
245
nC
53
nC
125
nC
0.10C/W
0.15C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS , VGS = 0V, Note 1
trr
QRM
IRM
IF = 26A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
52 A
208 A
1.4 V
260
2.7
20.8
ns
μC
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXFK52N100X
IXFX52N100X
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



Part Number IXFX52N100X
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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IXFX52N100X Datasheet PDF





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