IXGH10N170A - High Voltage IGBT

Datasheet Summary

Features

z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z Very high frequency z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification.

IXYS

📥 Download Datasheet

Datasheet Details

Part number	IXGH10N170A
Manufacturer	IXYS
File Size	560.68 KB
Description	High Voltage IGBT
Datasheet	IXGH10N170A Datasheet
Additional preview pages of the IXGH10N170A datasheet.

📁 Similar Datasheet

IXGH10N300 - High Voltage IGBT (IXYS Corporation)
IXGH10N60 - High speed IGBT (IXYS Corporation)
IXGH10N60A - High speed IGBT (IXYS Corporation)
IXGH12N100AU1 - IGBT (IXYS Corporation)
IXGH12N100U1 - IGBT (IXYS Corporation)
IXGH12N120A3 - GenX3 1200V IGBTs (IXYS Corporation)
IXGH12N60B - HiPerFAST IGBT (IXYS Corporation)
IXGH12N60BD1 - HiPerFAST IGBT (IXYS Corporation)
IXGH12N60CD1 - IGBT (IXYS Corporation)
IXGH12N90C - HiPerFAST IGBT Lightspeed Series (IXYS Corporation)

Other Datasheets by IXYS

IXGH10N170 - High Voltage IGBT
IXGH100N30C3 - High Speed PT IGBT
IXGH12N100 - High Speed IGBT
IXGH12N100A - High Speed IGBT
IXGH12N60C - IGBT
IXGH15N120B2D1 - IGBT
IXGH16N60C2D1 - IGBT
IXGH20N100 - IGBT

Full PDF Text Transcription

Click to expand full text

High Voltage IGBT Preliminary Data Sheet IXGH 10N170A IXGT 10N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 10 A = 6.0 V = 35 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 10 5 20 VGE = 15 V, TVJ = 125°C, RG = 22Ω Clamped inductive load ICM = 20 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 V V V V A A A A µs PC TC = 25°C TJ TJM Tstg 140 -55 ... +150 150 -55 ... +150 W °C °C °C Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.

Published: Oct 29, 2015 |