* International standard packages JEDEC TO-264 and PLUS247TM
* Low switching losses, low V(sat)
* MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC =
IXGK35N120B Datasheet (40.14 KB)
IXGK35N120B
IXYS
40.14 KB
Igbt.
Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(ty.
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