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IXYS

IXGN80N60A2 Datasheet Preview

IXGN80N60A2 Datasheet

IGBT

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Advanced Technical Data
IGBT
Optimized for Switching
up to 5 kHz
IXGN 80N60A2
IXGN 80N60A2D1
VCES =
IC25 =
VCE(sat) =
600 V
160 A
1.35 V
Symbol
Test Conditions
VCES
VCGR
TJ
TJ
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
= 25°C to 150°C
= 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1 ms
IXGN80N60A2D1
VGE = 15 V, TVJ = 125°C, RG = 2.0
Clamped inductive load
PC
TJ
TJM
Tstg
VISOL
Md
TC = 25°C
50/60 Hz
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
E D1
Maximum Ratings
600 V
600 V
±20 V
±30 V
160 A
80 A
60 A
320 A
ICM = 160
@ 0.8 VCES
625
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 1 mA, VCE = VGE
VCE = VCES, VGE = 0 V
Note 3
80N60A2
80N60A2D1
VCE = 0 V, VGE = ±20 V
IC = IC110, VGE = 15 V, Note 1
2.5 5.5
25
650
±400
1.2 1.35
V
µA
µA
nA
V
SOT-227B, miniBLOC
E153432 E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International standard package
miniBLOC
UL recognized
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current IGBT
Low VCE(sat) for minimum on-state
conduction losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 2 screws
Space savings
High power density
© 2004 IXYS All rights reserved
DS99180(05/04)




IXYS

IXGN80N60A2 Datasheet Preview

IXGN80N60A2 Datasheet

IGBT

No Preview Available !

IXGN 80N60A2D1
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 60 A; VCE = 10 V, Note 1
TBD
S
SOT-227B miniBLOC
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.0
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.4
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
250
4
10
0.05
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.2 K/W
K/W
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
typ. max.
VF
IRM
trr
RthJC
IF = 60 A, Note 1
TJ = 150°C
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs
VR = 100 V, TJ = 100°C
IF = 1 A, -di/dt = 50 A/µs, VR = 30 V
2.05
1.4
8.0
V
V
A
35 ns
1.65 K/W
Note: 1. Pulse test, t 300 µs, duty cycle d 2%
2. Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or increased RG
3. Parts must be heatsunk for high temperature ICES measurements
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344


Part Number IXGN80N60A2
Description IGBT
Maker IXYS
Total Page 2 Pages
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