IXGN80N60A2D1 Description
+150 °C °C °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 30 g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXGN80N60A2D1 Key Features
- high power dissipation Isolation voltage 3000 V~ Very high current IGBT Low VCE(sat) for minimum on-state conduction los
- drive simplicity Low collector-to-case capacitance (< 50 pF) Low package inductance (< 5 nH)
- easy to drive and to protect