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IXYS
IXYS

IXGP20N120B Datasheet Preview

IXGP20N120B Datasheet

High Voltage IGBT

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IXGP20N120B pdf
High Voltage IGBT with Diode
IXGP 20N120B
IXGP 20N120BD1
Preliminary Data Sheet
VCES
IC25
VCE(sat)
tfi(typ)
= 1200 V
= 40 A
= 3.4 V
= 160 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 10
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
Md Mounting torque (M3.5 screw)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
Weight
D1
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
40 A
20 A
100 A
ICM = 40
@0.8 VCES
190
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
0.55/5 Nm/lb.in.
300 °C
260 °C
4g
TO-220 (IXGP)
GC E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z International standard package
z IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
z MOS Gate turn-on
- drive simplicity
z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Advantages
z Saves space (two devices in one
package)
z Easy to mount with 1 screw
z Reduces assembly time and cost
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 20A, VGE = 15 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
20N120B
20N120BD1
2.5
5.0 V
50 µA
150 µA
TJ=125°C
±100 nA
2.9 3.4 V
2.8 V
© 2003 IXYS All rights reserved
DS99138(12/03)



IXYS
IXYS

IXGP20N120B Datasheet Preview

IXGP20N120B Datasheet

High Voltage IGBT

No Preview Available !

IXGP20N120B pdf
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 20A; VCE = 10 V,
Note 2.
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 20 A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 10
Note 1.
Inductive load, TJ = 125°C
IC = 20A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 10
Note 1
12 18
1700
20N120B
95
20N120BD1 105
39
72
12
27
25
15
150
160
2.1
25
18
1.4
270
360
3.5
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
280 ns
320 ns
3.5 mJ
ns
ns
mJ
ns
ns
mJ
0.65 K/W
0.25
K/W
IXGP 20N120B
IXGP 20N120BD1
TO-220 Outline
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF
IRM
trr
trr
RthJC
IF = 10 A, VGE = 0 V
TC = 90°C
IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V
VGE = 0 V; TJ = 125°C
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
3.3 V
10 A
14 A
120 ns
40 ns
2.5 K/W
Notes: 1.
2.
Switching times may increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG.
Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343


Part Number IXGP20N120B
Description High Voltage IGBT
Maker IXYS
Total Page 5 Pages
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IXGP20N120B pdf
IXGP20N120B Datasheet PDF
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