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IXGQ150N33TC - IGBT

Download the IXGQ150N33TC datasheet PDF. This datasheet also covers the IXGA150N33TC variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • Fast switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGA150N33TC-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGQ150N33TCD1 IGBT
IXGQ240N30PB High Speed IGBT
IXGQ28N120B High Voltage IGBT
IXGQ28N120BD1 High Voltage IGBT
IXGQ85N33PCD1 High Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Trench Gate High Speed IGBT For PDP Applications IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 VCES = ICP = VCE(sat) ≤ 330V 400A 1.8V Symbol VCES VGEM IC25 ICP IDP IC(RMS) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C Transient TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp < 10 μs TJ ≤ 150°C, tp < 10 μs Lead current limit TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220)(TO-3P) TO-263 TO-3P 150N33TC 150N33TCD1 Maximum Ratings 330 V ± 30 V 150 400 40 75 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 5.5 A A A A W °C °C °C °C °C Nm/lb.in.