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IXGQ150N33TCD1, IXGA150N33TC Datasheet - IXYS

IXGQ150N33TCD1 IGBT

Trench Gate High Speed IGBT For PDP Applications IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 VCES = ICP = VCE(sat) ≤ 330V 400A 1.8V Symbol VCES VGEM IC25 ICP IDP IC(RMS) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C Transient TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp < 10 μs TJ ≤ 150°C, tp < 10 μs Lead current limit TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220)(TO-3P) TO-263 TO-3P 150N33TC 150N33TCD1 Maximum .

IXGQ150N33TCD1 Features

* International standard packages

* Low VCE(sat) - for minimum on-state conduction losses

* Fast switching Applications

* PDP Screen Drivers © 2008 IXYS CORPORATION, All rights reserved DS99757A(09/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified

IXGQ150N33TCD1, IXGA150N33TC Datasheet

This datasheet PDF includes multiple part numbers: IXGQ150N33TCD1, IXGA150N33TC. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXGQ150N33TCD1, IXGA150N33TC

Manufacturer:

IXYS

File Size:

194.53 KB

Description:

Igbt.

This datasheet PDF includes multiple part numbers: IXGQ150N33TCD1, IXGA150N33TC.
Please refer to the document for exact specifications by model.

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TAGS

IXGQ150N33TCD1 IXGA150N33TC IGBT IXYS

IXGQ150N33TCD1 Distributor