IXYS IXGQ150N33TCD1
IGBT
APPLICATIONS
IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 VCES = ICP = VCE(sat) ≤ 330V 400A 1.8V Symbol VCES VGEM IC25 ICP IDP IC(RMS) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C Transient TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp < 10 μs TJ ≤ 150°C, tp < 10 μs Lead current limit TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220)(TO-3P) TO-263 TO-3P 150N33TC 150N33TCD1MAXIMUM RATINGS
330 V ± 30 V 150 400 40 75 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 5.5 A A A A W °C °C °C °C °C Nm/lb.in. g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = 330 V VGE= 0 V VCE= 0 V, VGE = ±20 V VGE = 15V, IC = 75A IC = 150A Characteristic Values Min. Typ. Max. 330 3.0 TJ = 125°C V 5.0 V 1 μA 200 μA ±100 nA TJ = 125°C TJ = 125°C 1.48 1.49 1.83 1.97 1.8 V V V V TO-263 (IXGA) G E TO-3P (IXGQ) (TAB) G CE (TAB) G = Gate E = Emi...