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IXGR32N170H1 Datasheet - IXYS

IXGR32N170H1 High Voltage IGBT

High Voltage IGBT with Diode Electrically Isolated Tab Preliminary Data Sheet IXGR 32N170H1 IVCC2E5S VCE(sat) tfi(typ) = 1700 V = 38 A = 3.5 V = 250 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C 38 20 14 TC = 25°C, 1 ms 200 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 @ 0.8 VCES TJ = 125°C, VCE = 1200 .

IXGR32N170H1 Features

* z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC chop

IXGR32N170H1-IXYS.pdf

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Datasheet Details

Part number:

IXGR32N170H1

Manufacturer:

IXYS

File Size:

78.36 KB

Description:

High voltage igbt.

IXGR32N170H1 Distributor

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IXGR32N170H1 High Voltage IGBT IXYS