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IXGR32N170AH1 - High Voltage IGBT

Key Features

  • z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification.

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Full PDF Text Transcription for IXGR32N170AH1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGR32N170AH1. For precise diagrams, and layout, please refer to the original PDF.

Advance Technical Information www.DataSheet4U.com High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 26 A = 5.2 ...

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Tab IXGR 32N170AH1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 26 A = 5.2 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg FC VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω TC = 25°C Maximum Ratings 1700 1700 ± 20 ± 30 26 17 14 200 ICM = 70 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ...

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