IXGR32N170H1 Overview
High Voltage IGBT with Diode Electrically Isolated Tab Preliminary Data Sheet IXGR 32N170H1 IVCC2E5S VCE(sat) tfi(typ) = 1700 V = 38 A = 3.5 V = 250 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC TJ = 25°C to.
IXGR32N170H1 Key Features
- drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0