Full PDF Text Transcription for IXGR32N90B2D1 (Reference)
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IXGR32N90B2D1. For precise diagrams, and layout, please refer to the original PDF.
Advance Technical Information HiPerFASTTM IGBT IXGR 32N90B2D1 with Fast Diode Electrically Isolated Base V I CES VC25 t CE(sat) fi typ = 900 V = 47 A = 2.9 V = 150 ns Sym...
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Base V I CES VC25 t CE(sat) fi typ = 900 V = 47 A = 2.9 V = 150 ns Symbol Test Conditions VCES VCGR TJ = 25OC to 150OC TJ = 25OC to 150OC; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC110 ICM TC = 25OC TC = 110OC TC = 25OC, 1 ms SSOA (RBSOA) PC VGE= 15 V, TVJ = 125OC, RG = 10 Ω Clamped inductive load: VCL < 600V TC = 25OC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL FC Weight 50/60Hz, RMS, T= I minute Iisol < 1mA Mounting force Maximum Ratings 900 V 900 V ±20 V ±30 V 47 A 22 A 200 A ICM = 64 A 160 -55 ... +150 150 -55 ... +150 300 W OC OC OC OC 2500 3000 20..120/4.5..
IXGR32N90B2D1 Datasheet
