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IXGR16N170AH1 - High Voltage IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 2500V~ Electrical Isolation.
  • Anti-Parallel Sonic Diode.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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High Voltage IGBT w/ Sonic Diode (Electrically Isolated Tab) IXGR16N170AH1 VCES IC90 VCE(sat) tfi(typ) = 1700V = 8A £ 5.0V = 35ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient Maximum Ratings 1700 V 1700 V 20 V 30 V TC = 25C TC = 90C TC = 90C TC = 25C, 1ms 16 A 8 A 15 A 40 A VGE = 15V, TVJ = 125C, RG = 10 Clamped Inductive Load ICM = 40 A 0.8 • VCES VGE = 15V, VCE = 1200V, TJ = 125°C RG = 22, Non Repetitive 10 μs TC = 25C 120 W -55 ... +150 C 150 C -55 ...
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