IXGR50N90B2D1
IXGR50N90B2D1 is IGBT manufactured by IXYS.
IXGR 50N90B2D1
Hi Per FASTTM IGBT with Fast Diode
IXGR 50N90B2D1
B2-Class High Speed IGBT with Fast Diode
(Electrically Isolated Back Surface)
VCES IC25 VCE(sat) tfi typ
= 900 V = 40 A = 2.9 V = 200 ns
Symbol
Test Conditions
VCES V
VGES VGEM
IC25 IC110 I
F110
I CM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C TC = 110°C (IGBT) TC = 110°C (diode) TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 720V
PC TC = 25°C
TJ T
T stg
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
VISOL FC Weight
50/60 Hz, RMS, t = 1ms Mounting force (PLUS247)
Maximum Ratings
900 V 900 V
± 20 ±...
