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High Voltage IGBT w/ Diode
IXGH28N120BD1 IXGT28N120BD1
VCES =
IC25 = VCE(sat) ≤
tfi(typ) =
1200V 50A 3.5V 170ns
TO-247AD (IXGH)
Symbol
VCES VCGR
VGES VGEM IC25 IC100 IF90 ICM SSOA
(RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C ( Chip Capability ) TC = 100°C TC = 90°C TC = 25°C, 1ms VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque (TO-247) TO-247 TO-286
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
50
A
28
A
10
A
150
A
ICM = 120
A
0.8 • VCES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
6 4
Nm/lb.in.
IXGT28N120BD1 Datasheet
