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IXGT30N60B2D1 - IGBT

Download the IXGT30N60B2D1 datasheet PDF. This datasheet also covers the IXGH30N60B2D1 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Medium frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH30N60B2D1-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2D1 IXGT 30N60B2D1 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 Maximum Ratings 600 V 600 V ±20 V ±30 V 70 A 30 A 150 A ICM = 60 A 190 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C 1.13/10Nm/lb.in.
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