Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 24 A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 24 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
(TO-247)
18 26
S
1500
145
40
pF
pF
pF
66 nC
9 nC
22 nC
13
15
110
82
0.32
ns
ns
200 ns
150 ns
0.6 mJ
13
17
0.22
200
150
0.9
ns
ns
mJ
ns
ns
mJ
0.65 K/W
0.25
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = 30 A, VGE = 0 V, Pulse test
TJ =150°C
1.6 V
t ≤ 300 µs, duty cycle d ≤ 2 %
2.5 V
IRM
trr
RthJC
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C
VR = 100 V
TJ = 100°C 100
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
25
4A
ns
ns
0.9 K/W
IXGH 30N60B2D1
IXGT 30N60B2D1
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
