IXGT32N90B2D1 Overview
RGE = 1 MW Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load: +150 300 W °C °C °C °C TO-247 TO-268 1.13/10 Nm/lb.in. 6g 4g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = IC110, VGE = 15 V Characteristic Values (TJ = 25°C unless otherwise specified)...
IXGT32N90B2D1 Key Features
- High frequency IGBT
- High current handling capability
- MOS Gate turn-on
- drive simplicity