IXGX50N60B2D1 Overview
+150 °C °C °C 1.13/10 Nm/lb.in.
IXGX50N60B2D1 Key Features
- High frequency IGBT and
- High current handling capability
- MOS Gate turn-on for drive simplicity
- Fast Recovery Epitaxial Diode (FRED)
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IXGX50N60B2D1 |
|---|---|
| Datasheet | IXGX50N60B2D1 IXGK50N60B2D1 Datasheet (PDF) |
| File Size | 491.70 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | IGBT |
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+150 °C °C °C 1.13/10 Nm/lb.in.
See all IXYS (now Littelfuse) datasheets
| Part Number | Description |
|---|---|
| IXGX55N120A3H1 | 1200V IGBT |
| IXGX120N120A3 | Ultra-Low Vsat PT IGBT |
| IXGX120N120B3 | High Speed Low Vsat PT IGBT |
| IXGX120N60A3 | Ultra-Low Vsat PT IGBT |
| IXGX120N60C2 | IGBT |
| IXGX120NC60C2 | HiPerFAST IGBT |
| IXGX320N60A3 | 600V IGBT |
| IXGX320N60B3 | Medium-Speed Low-Vsat PT IGBT |
| IXGX32N170AH1 | High-Voltage IGBT |
| IXGX32N170H1 | High Voltage IGBT |